Ti-doped In2O3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB-PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conductivity are obtained for samples with titanium contents near 6 at.%, with typical resistivity values of 4 x 10(-5) Omega cm. Finally, the band-gap energy evolution is studied for the set of samples. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim