graphene transfered layer
We report hot filament thermal CVD (HFTCVD) as a new variant of hot filament CVD and demonstrate its use to produce high quality large area of strictly monolayer graphene films on Cu substrates. Surface morphology of as grown graphene films was observed by field-emission scanning electron microscope (FESEM), and Atomic Force microscopy (AFM) in tapping mode. The identity of graphene was established by Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS) analysis. Raman studies confirmed the presence of monolayer graphene with a Cu2O buffer layer underneath. The presence of Cu2O layer was also indicated by XPS analysis. XPS also further confirmed the presence of monolayer graphene on as-deposited Cu substrate. The presence of hydroxylated and oxygenated carbon sites on as-deposited graphene was revealed from XPS measurements indicating slight oxidation (27.7%).
In principle, HFTCVD can be extended to all other materials (Si, SiO2, SiC etc.,) and to all processes possible by HFCVD and thermal CVD.
published in Scientific Reports 2, 00682 (2012).