electronic structure

Ultrafast atomic diffusion inducing a reversible transition on Sn/Si(111):B

paqui 27 mayo, 2015 27 mayo, 2015Sin categoría

Here, we present experimental and theoretical evidence of a new reversible transition that takes place in Sn/Si(111):B. The system changes from an insulating (2 √ 3 × 2 √ 3)R30º structure at room temperature to a (√ 3 × √ 3)R30º symmetry above 520 K (2 √ 3 and √…

Electronic contacts at the atomic scale for future graphene-based electronics

paqui 20 junio, 2014 20 junio, 2014Sin categoría

Due to its exceptional conduction properties, graphene has been proposed as a candidate to replace silicon in future electronics. However, several problems need to be overcome prior to its implantation in the production chain. Among these difficulties, one of the most fundamental unknown aspects is how to contact graphene with…

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