{"id":346,"date":"2013-05-08T10:08:35","date_gmt":"2013-05-08T12:08:35","guid":{"rendered":"http:\/\/www.icmm.csic.es\/surfcoat\/?page_id=346"},"modified":"2013-05-08T10:08:35","modified_gmt":"2013-05-08T12:08:35","slug":"synthesis","status":"publish","type":"page","link":"https:\/\/wp.icmm.csic.es\/surfcoat\/equipment\/synthesis\/","title":{"rendered":"Materials Synthesis"},"content":{"rendered":"

<\/h1>\n

Equipment: Material Synthesis<\/h1>\n\n\n\n\n\n\n\n\n
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PVD Systems<\/strong><\/h2>\n<\/td>\n<\/tr>\n

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    \n
  • Magnetron sputtering 1:<\/strong> 100 W DC, Base pressure: < 10-6<\/sup> mbar, Trajectory generator for multilayer depositions, Ion gun for surface modification during growth.<\/strong><\/li>\n<\/ul>\n<\/td>\n
\u00a0\"\"<\/a><\/td>\n<\/tr>\n
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    \n
  • Magnetron sputtering 2:<\/strong> Base pressure < 10-7\u00a0<\/sup>mbar, 2-cathode simultaneous co-sputtering, Pulsed sources , In-situ optical measurements (ellipsometry) , load lock accessory.<\/strong><\/li>\n<\/ul>\n<\/td>\n
\u00a0\"\"<\/a><\/td>\n<\/tr>\n
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    \n
  • Magnetron sputtering 3:<\/strong> Base pressure < 10-7\u00a0<\/sup>mbar, 3-cathode simultaneous co-sputtering, Rotating holder for deposition under variable angles , load lock accessory (in preparation).<\/strong><\/li>\n<\/ul>\n<\/td>\n
\u00a0\"\"<\/a><\/td>\n<\/tr>\n
\n
    \n
  • IBAD: (Nacho J\/Nacho C\/Jose)<\/strong><\/li>\n<\/ul>\n<\/td>\n
\u00a0\"\"<\/a><\/td>\n<\/tr>\n
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    \n
  • Pulsed Filtered Cathodic Arc System: <\/strong>Highly ionized plasma and high arc currents (1×1011<\/sup> A\/m2<\/sup>) operating in pulsed mode. Plasma genetared by a triple cathode minigun and guided\u00a0 through a macroparticle 90o <\/sup>filter . <\/strong><\/li>\n<\/ul>\n<\/td>\n
\u00a0\"\"<\/a><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n\n\n\n\n\n\n\n
\n

CVD Systems<\/strong><\/h2>\n<\/td>\n<\/tr>\n

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    \n
  • ECR (Electron Cyclotron Resonance)-CVD: <\/strong>Remote plasma system with stainless steel reacstor. Substrate biased. Temperature: Tamb<\/sub>-120o<\/sup>C. Pressure: ~10-2<\/sup> mbar (7.5 mTorr). Discharge power: 0-200 W<\/strong><\/li>\n<\/ul>\n<\/td>\n
\n

\u00a0\"\"<\/a><\/strong><\/p>\n<\/td>\n<\/tr>\n

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    \n
  • LP (Low Pressure)-CVD: <\/strong>Quartz reactor. External resistive heating system. Temperature: Tamb<\/sub>-1000o<\/sup>C. Pressure: 1-300 Torr<\/li>\n<\/ul>\n<\/td>\n
\u00a0\"\"<\/a><\/td>\n<\/tr>\n
\n
    \n
  • PA (RF Plasma Assisted)-CVD: <\/strong>RF discharge (13.56 MHz). Aluminium reactor. Temperature: Tamb<\/sub>-350o<\/sup>C. Pressure: 600 mTorr- 2 Torr. Discharge power: 0-600 W<\/li>\n<\/ul>\n<\/td>\n
\u00a0\"\"<\/a><\/td>\n<\/tr>\n
\n
    \n
  • MW (Microwave plasma assisted)-CVD: <\/strong>Microwave discharge (2.54 GHz). Staniless steel reactor. Temperature: Tamb<\/sub>-600o<\/sup>C. Pressure: 20-80 Torr. Discharge power: < 1.5 kW<\/li>\n<\/ul>\n<\/td>\n
\u00a0\"\"<\/a><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

Equipment: Material Synthesis PVD Systems Magnetron sputtering 1: 100 W DC, Base pressure: < 10-6 mbar, Trajectory generator for multilayer depositions, Ion gun for surface modification during growth. \u00a0 Magnetron sputtering 2: Base pressure < 10-7\u00a0mbar, 2-cathode simultaneous co-sputtering, Pulsed sources , In-situ optical measurements (ellipsometry) , load lock accessory….<\/p>\n

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