2020
[1] Z. Gao, S. Wang, J. Berry, Q. Zhang, J. Gebhardt, W.M. Parkin, J. Avila, H. Yi, C. Chen, S. Hurtado-Parra, M. Drndić, A.M. Rappe, D.J. Srolovitz, J.M. Kikkawa, Z. Luo, M.C. Asensio, F. Wang, A.T.C. Johnson, Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene, Nat Commun. 11 (2020) 546. https://doi.org/10.1038/s41467-019-14022-3.
[2] S.J. Gilbert, H. Yi, J.-S. Chen, A.J. Yost, A. Dhingra, J. Abourahma, A. Lipatov, J. Avila, T. Komesu, A. Sinitskii, M.C. Asensio, P.A. Dowben, Effect of Band Symmetry on Photocurrent Production in Quasi-One-Dimensional Transition-Metal Trichalcogenides, ACS Appl. Mater. Interfaces. 12 (2020) 40525–40531. https://doi.org/10.1021/acsami.0c11892.
[3] S.F. Mayer, J.E. Rodrigues, C. Marini, M.T. Fernández-Díaz, H. Falcón, M.C. Asensio, J.A. Alonso, A comprehensive examination of the local- and long-range structure of Sb6O13 pyrochlore oxide, Sci Rep. 10 (2020) 16956. https://doi.org/10.1038/s41598-020-73860-0.
[4] V.L. Nguyen, D.L. Duong, S.H. Lee, J. Avila, G. Han, Y.-M. Kim, M.C. Asensio, S.-Y. Jeong, Y.H. Lee, Layer-controlled single-crystalline graphene film with stacking order via Cu–Si alloy formation, Nat. Nanotechnol. (2020). https://doi.org/10.1038/s41565-020-0743-0.
[5] H. Yi, S.J. Gilbert, A. Lipatov, A. Sinitskii, J. Avila, J. Abourahma, T. Komesu, M.C. Asensio, P.A. Dowben, The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS 3 compared to TiS 3, J. Phys.: Condens. Matter. 32 (2020) 29LT01. https://doi.org/10.1088/1361-648X/ab832c.
[6] F. Bourquard, Y. Bleu, A.-S. Loir, B. Caja-Munoz, J. Avila, M.-C. Asensio, G. Raimondi, M. Shokouhi, I. Rassas, C. Farre, C. Chaix, V. Barnier, N. Jaffrezic-Renault, F. Garrelie, C. Donnet, Electroanalytical Performance of Nitrogen-Doped Graphene Films Processed in One Step by Pulsed Laser Deposition Directly Coupled with Thermal Annealing, Materials. 12 (2019) 666. https://doi.org/10.3390/ma12040666.
[7] P.M. Coelho, K. Nguyen Cong, M. Bonilla, S. Kolekar, M.-H. Phan, J. Avila, M.C. Asensio, I.I. Oleynik, M. Batzill, Charge Density Wave State Suppresses Ferromagnetic Ordering in VSe2 Monolayers, J. Phys. Chem. C. (2019) acs.jpcc.9b04281. https://doi.org/10.1021/acs.jpcc.9b04281.
[8] I.G. Gorlova, V.Ya. Pokrovskii, A.V. Frolov, A.P. Orlov, Comment on “Gate-Controlled Metal–Insulator Transition in TiS 3 Nanowire Field-Effect Transistors,” ACS Nano. 13 (2019) 8495–8497. https://doi.org/10.1021/acsnano.9b04225.
[9] J. Hall, N. Ehlen, J. Berges, E. van Loon, C. van Efferen, C. Murray, M. Rösner, J. Li, B.V. Senkovskiy, M. Hell, M. Rolf, T. Heider, M.C. Asensio, J. Avila, L. Plucinski, T. Wehling, A. Grüneis, T. Michely, Environmental Control of Charge Density Wave Order in Monolayer 2H-TaS2, ACS Nano. (2019) acsnano.9b03419. https://doi.org/10.1021/acsnano.9b03419.
[10] Z. Hu, J. Avila, X. Wang, J.F. Leong, Q. Zhang, Y. Liu, M.C. Asensio, J. Lu, A. Carvalho, C.H. Sow, A.H. Castro Neto, The Role of Oxygen Atoms on Excitons at the Edges of Monolayer WS 2, Nano Lett. (2019) acs.nanolett.9b01670. https://doi.org/10.1021/acs.nanolett.9b01670.,
2021
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