PVD Systems

• Magnetron sputtering 1: 100 W DC, Base pressure: < 10^-6 mbar, Trajectory generator for multilayer depositions, Ion gun for surface modification during growth.

• Magnetron sputtering 2: Base pressure < 10^-7 mbar, 2-cathode simultaneous co-sputtering, Pulsed sources , In-situ optical measurements (ellipsometry) , load lock accessory.

• Magnetron sputtering 3: Base pressure < 10^-7 mbar, 3-cathode simultaneous co-sputtering, Rotating holder for deposition under variable angles , load lock accessory (in preparation).

• IBAD: (Nacho J/Nacho C/Jose)

• Pulsed Filtered Cathodic Arc System: Highly ionized plasma and high arc currents (1×10¹¹ A/m²) operating in pulsed mode. Plasma genetared by a triple cathode minigun and guided  through a macroparticle 90^o filter .

CVD Systems

• ECR (Electron Cyclotron Resonance)-CVD: Remote plasma system with stainless steel reacstor. Substrate biased. Temperature: T_amb-120^oC. Pressure: ~10^-2 mbar (7.5 mTorr). Discharge power: 0-200 W

• LP (Low Pressure)-CVD: Quartz reactor. External resistive heating system. Temperature: T_amb-1000^oC. Pressure: 1-300 Torr

• PA (RF Plasma Assisted)-CVD: RF discharge (13.56 MHz). Aluminium reactor. Temperature: T_amb-350^oC. Pressure: 600 mTorr- 2 Torr. Discharge power: 0-600 W

• MW (Microwave plasma assisted)-CVD: Microwave discharge (2.54 GHz). Staniless steel reactor. Temperature: T_amb-600^oC. Pressure: 20-80 Torr. Discharge power: < 1.5 kW