Prof. Giorgos Katsaros,

Institute of Science and Technology Austria (ISTA), Austria

Spin qubits and hybrid devices in planar Ge

When: 12:00-13:00 CET, May 26th (Friday), 2023

Where: Seminar Room, ICMM-CSIC, Campus de Cantoblanco, Madrid

Ge, the material that was first utilized for the development of transistors at Bell Labs in 1947, has recently attracted significant attention for its potential in the field of quantum information. Particularly, the focus has shifted towards hole gases in Ge/SiGe heterostructures due to their combination of high mobilities, strong spin-orbit interaction, and electrically adjustable g-factors. These attributes make Ge quantum wells not only a promising candidate for spin qubits but also for the creation of hybrid superconductor-semiconductor devices. In this presentation, I will present our latest findings on planar Germanium, emphasizing its potential for co-integration of semiconductor with superconducting technology.