ARTICLE 2021_ 16

K. Sakamoto, H. Ishikawa, T. Wake, C. Ishimoto, J. Fujii, H. Bentmann, M. Ohtaka, K. Kuroda, N. Inoue, T. Hattori, T. Miyamachi, F. Komori, I. Yamamoto, C. Fan, P. Krüger, H. Ota, F. Matsui, F. Reinert, J. Avila, M.C. Asensio, Spatial Control of Charge Doping in n-Type Topological Insulators, Nano Lett. (2021) acs.nanolett.1c01100. https://doi.org/10.1021/acs.nanolett.1c01100.