The properties of two-dimensional (2D) materials always show exotic and intriguing behavior. A generic characteristic of all these 2D materials is that all the atoms of the materials are exposed on the surface. Therefore, it is comparatively easier to adjust materials’ structure, physical and chemical properties through surface treatments. Hence they are excellent candidates to use in nanoelectronics. They are used in nanotechnology for electronic components and research on electronics improvements such as display, size, and power consumption for practical use. This includes research on memory chips and surface physical modifications on electronic devices. Nanoelectronics cover quantum mechanical properties of the hybrid material, semiconductor, bidimensional materials, and single-dimensional nanotubes, nanowires, and so forth. Well-developed nanoelectronics can be applied in different fields and are especially useful as sensors, transistors, and diodes. Nanoelectronics is an emerging area in the advanced research field for its wide range of applications in science and technology.

Our group has been one of the pioneers to carry out groundbreaking measurements of the electronic band structure of 2D materials using classical nano-ARPES technique and in operando to determine the electronic band dispersión and estimate device characteristics, such as the carrier concentration, mobility, effective barrier height, and ideality factor from I–V measurements under different gate voltages. First direct characterization of silicene, graphene on various substrates, and few graphene layers with different stacking. Beyond graphene, the GREENER group has completed the determination of the band structure and gap size of Transition Metal Dichalcogenides (TMDs), Transition Metal Trichalcogenides (TMTs), black arsenic, and h-boron nitride, among others.

Recent important contributions

• Gainza, F. Serrano-Sánchez, M. Gharsallah, F. Carrascoso, J. Bermúdez, O.J. Dura, F.J. Mompean, N. Biskup, J.J. Meléndez, J.L. Martínez, J.A. Alonso, N.M. Nemes, Evidence of nanostructuring and reduced thermal conductivity in n-type Sb-alloyed SnSe thermoelectric polycrystals, Journal of Applied Physics. 126 (2019) 045105. https://doi.org/10.1063 /1.5108569.
• Zhang, Q. Zhao, C. Munuera, M. Lee, E. Flores, J.E.F. Rodrigues, J.R. Ares, C. Sanchez, J. Gainza, H.S.J. van der Zant, J.A. Alonso, I.J. Ferrer, T. Wang, R. Frisenda, A. Castellanos- Gomez, Integrating van der Waals materials on paper substrates for electrical and optical applications, Applied Materials Today. 23 (2021) 101012. https://doi.org/10.1016 /j.apmt.2021.101012.
• Gainza, F. Serrano-Sánchez, J.E.F.S. Rodrigues, Y. Huttel, O.J. Dura, M.M. Koza, M.T. Fernández-Díaz, J.J. Meléndez, B.G. Márkus, F. Simon, J.L. Martínez, J.A. Alonso, N.M. Nemes, High-Performance n-type SnSe Thermoelectric Polycrystal Prepared by Arc-Melting, Cell Reports Physical Science. 1 (2020) 100263. https://doi.org/10.1016/j.xcrp.2020.100263.
• J.E.F.S. Rodrigues, J. Gainza, F. Serrano-Sánchez, C. López, O.J. Dura, N. Nemes, J.L. Martinez, Y. Huttel, F. Fauth, M.T. Fernández-Diaz, N. Biškup, J.A. Alonso, Structural Features, Anisotropic Thermal Expansion, and Thermoelectric Performance in Bulk Black Phosphorus Synthesized under High Pressure, Inorg. Chem. 59 (2020) 14932–14943. https://doi.org/10.1021/acs.inorgchem.0c01573.