“Geometrically designed domain wall trap in tri-segmented nickel magnetic nanowires for spintronics devices”
Farzad Nasirpouri, Seyed-Majid Peighambari-Sattari, Cristina Bran, Ester M. Palmero, Eider Berganza Eguiarte, Manuel Vazquez, Aristotelis Patsopoulos and Dimitris Kechrakos, Scientific Reports (2019) 9:9010 | https://doi.org/10.1038/s41598-019-45553-w
“Domain wall traps” have been engineered diameter-modulated (DM) cylindrical magnetic nanowires (NWs). A systematic study on the magnetization behavior, domain wall structure and its nucleation/propagation in tri-segmented diameter-modulated Ni nanowires was performed to investigate the magnetization reversal as function of segment geometry. Two distinct geometries include: dumbbell-type (type I) and rolling pin-type (type II). Based on experimental and theoretical simulations, it was evidenced that the wide-narrow junctions create trap sites for domain walls where the narrow segment restricts their motion. This type of geometrically engineered nanowires exhibit potential efficiency for future novel spintronic devices in particular when assembled in arrays as a practical 2D memory devices.
