A paper has recently been published in Nanomaterials as a result of our collaboration with the Instituto de Nanociencia y Materiales de Aragón. In this study, the demonstration that high quality epitaxial Hf_0.5Zr_0.5O₂ films can be grown directly on C- oriented corundum substrates with a non-centrosymmetric orthorhombic structure, whose polar nature has been corroborated by pyroelectric measurements, contributes to the understanding of the mechanisms of the epitaxial stabilization of the ferroelectric phase of hafnia.

Direct Epitaxial Growth of Polar Hf0.5Zr0.5O2 Films on Corundum
E. Barriuso, P. Koutsogiannis, D. Serrate, J. Herrero-Martín, R. Jiménez, C. Magén, M. Algueró, P.A. Algarabel, J.A. Pardo
Nanomaterials 12, 1232 (2022)