Archivo de la etiqueta: doping

Nanostructural changes upon substitutional Al doping in ZnO sputtered films

Publicada el 6 febrero, 2019 por agullo

A. R. Landa-Cánovas, J. Santiso, F. Agulló-Rueda, P. Herrero, E. Navarrete-Astorga, E. Ochoa-Martínez, J. R. Ramos-Barrado, and M. Gabás, “Nanostructural changes upon substitutional Al doping in ZnO sputtered films,” Ceram. Int. 45, 6319–6327 (2019). Al:ZnO layers, with low and high … Sigue leyendo →

Publicado en HRTEM, microscopy, nanocharacterization, nanoscience, Publications, Raman spectroscopy, transparent conductive oxides, zinc oxide | Etiquetado , , , , , , , , | Comentarios desactivados en Nanostructural changes upon substitutional Al doping in ZnO sputtered films

Characterization of the interface between highly conductive Ga:ZnO films and the silicon substrate

Publicada el 19 mayo, 2017 por icmmadmin

Work in collaboration with the Nanotech Unit, Department of Applied Physics I, University of Malaga, Spain. M. Gabás, E. Ochoa-Martínez, E. Navarrete-Astorga, A. R. Landa-Cánovas, P. Herrero, F. Agulló-Rueda, S. Palanco, J. J. Martínez-Serrano, and J. R. Ramos-Barrado, “Characterization of … Sigue leyendo →

Publicado en HRTEM, microscopy, nanocharacterization, nanoscience, nanotechnology, Publications, transparent conductive oxides, zinc oxide | Etiquetado , , , , , , , | Comentarios desactivados en Characterization of the interface between highly conductive Ga:ZnO films and the silicon substrate

Characterization of ZnO:Ga thin films on silicon

Publicada el 2 mayo, 2011 por icmmadmin

M. Gabás, P. Díaz-Carrasco, F. Agulló-Rueda, P. Herrero, A. R. Landa-Cánovas, and J. R. Ramos-Barrado, «High quality ZnO and Ga:ZnO thin films grown onto crystalline Si (100) by RF magnetron sputtering,» Sol. Energy Mater. Sol. Cells, 95, 2327–2334 (2011) .

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