Archivo de la etiqueta: ion implantation

Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Publicada el 31 julio, 2017 por icmmadmin

F. Agulló-Rueda, N. Gordillo, M. D. Ynsa, A. Maira, J. Cañas, and M. A. Ramos, “Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing,” Carbon , accepted (2017). We have studied the radiation damage in diamond as a … Sigue leyendo →

Publicado en diamond, ion irradiation, microscopy, nanocharacterization, photoluminescence, Publications, Raman spectroscopy | Etiquetado , , , , , , | Comentarios desactivados en Lattice damage in 9-MeV-carbon irradiated diamond and its recovery after annealing

Micro-Raman spectroscopy of near-surface damage in diamond irradiated with 9-MeV boron ions

Publicada el 16 enero, 2017 por icmmadmin

F. Agulló-Rueda, M. D. Ynsa, N. Gordillo, A. Maira, D. Moreno-Cerrada, and M. A. Ramos, “Micro-Raman spectroscopy of near-surface damage in diamond irradiated with 9-MeV boron ions,” Diamond Relat. Mater. 72, 94–98 (2017) We have studied the near-surface damage in … Sigue leyendo →

Publicado en diamond, ion irradiation, microscopy, nanocharacterization, photoluminescence, Raman spectroscopy | Etiquetado , , , , | Comentarios desactivados en Micro-Raman spectroscopy of near-surface damage in diamond irradiated with 9-MeV boron ions

Characterization of TiNO/TiN films

Publicada el 18 mayo, 2011 por icmmadmin

E. Punzón Quijorna, V. Torres Costa, F. Agulló-Rueda, P. Herrero Fernández, A. Climent, F. Rossi and M. Manso Silván, «TiNxOy/TiN dielectric contrasts obtained by ion implantation of O2+; structural, optical and electrical properties,» J. Phys. D: Appl. Phys. 44(23), 235501 … Sigue leyendo →

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