Archivo de la categoría: semiconductor

Spatially resolved MoOx phases by laser localized oxidation of MoO2

Publicada el 20 abril, 2021 por agullo

MoO2 thin films were subjected to a laser localized oxidation process that allowed to obtain different well defined MoOx phases. In particular, spatially resolved MoO2, α-MoO3, β-MoO3, amorphous a-MoO3, and Mo4O11 regions were obtained as a function of the laser … Sigue leyendo →

Publicado en laser irradiation, microscopy, nanocharacterization, Raman spectroscopy, semiconductor, Sin categoría, transition metal oxides | Etiquetado , , , , , , | Comentarios desactivados en Spatially resolved MoOx phases by laser localized oxidation of MoO2

Growth of out-of-plane standing MoTe2(1−x)Se2x/MoSe2 composite flake films by sol-gel nucleation of MoOy and isothermal closed space telluro-selenization

Publicada el 26 enero, 2021 por agullo

A. Fernández García, V. Torres-Costa, O. de Melo, F. Agulló-Rueda, G. R. Castro and M. Manso Silvan, “Growth of out-of-plane standing MoTe2(1−x)Se2x/MoSe2 composite flake films by sol-gel nucleation of MoOy and isothermal closed space telluro-selenization,” Appl. Surf. Sci. 546, 149076 … Sigue leyendo →

Publicado en nanocharacterization, nanoscience, nanotechnology, Publications, Raman spectroscopy, semiconductor | Etiquetado , , , | Comentarios desactivados en Growth of out-of-plane standing MoTe2(1−x)Se2x/MoSe2 composite flake films by sol-gel nucleation of MoOy and isothermal closed space telluro-selenization